Nonvolatile memory devices and methods of fabricating the same

Abstract

A nonvolatile memory cell includes a source region and a drain region which are disposed in a semiconductor substrate and spaced apart from each other, a source selection line and a drain selection line disposed over the semiconductor substrate between the source region and the drain region. The source selection line and the drain selection line are disposed adjacent to the source region and the drain region, respectively. The nonvolatile memory cell further includes a cell gate pattern disposed over the semiconductor substrate between the source selection line and the drain selection line, a first floating impurity region provided in the semiconductor substrate under a gap region between the source selection line and the cell gate pattern and a second floating impurity region provided in the semiconductor substrate under a gap region between the drain selection line and the cell gate pattern. Distances between the cell gate pattern and the selection lines are less than widths of the selection lines.