The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Dec. 28, 2001
Jum Soo Kim, Kyungki-Do, KR;
Sung Mun Jung, Kyungki-Do, KR;
Min Kuck Cho, Kyungki-Do, KR;
Young Bok Lee, Kyungki-Do, KR;
Jum Soo Kim, Kyungki-Do, KR;
Sung Mun Jung, Kyungki-Do, KR;
Min Kuck Cho, Kyungki-Do, KR;
Young Bok Lee, Kyungki-Do, KR;
Hynix Semiconductor Inc., Ichon-Shi, Kyungki-Do, KR;
Abstract
The present invention relates to a method manufacturing a code address memory (CAM) cell. The present invention uses a dielectric film in which an oxide film and a nitride film between a floating gate and a control gate in a flash memory cell are stacked as a gate insulating film between a semiconductor substrate and a gate in the CAM cell. Therefore, the present invention can reduce the area of a peripheral circuit region and stably secure repaired data since the CAM cell can be stably driven at a low operating voltage and additional boosting circuit is thus not required.