The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
May. 22, 2007
Cheng-chih Huang, Taipei County, TW;
Cheng-Chih Huang, Taipei County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of manufacturing a memory device. The memory device comprises a trench in a substrate, a capacitor at the low portion of the trench, a collar dielectric layer overlying the capacitor and covering a portion of the sidewall of the trench, and a conductive layer filling a portion of the trench over the capacitor. First, a first mask layer is formed on the conductive layer, wherein a bottom portion of the first mask layer is thicker than the side portion thereof in the trench. A second mask layer is formed on the first mask layer. Next, a portion of the second mask layer in the trench is ion implanted. The unimplanted portion of the second mask layer is removed.