The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2009

Filed:

Nov. 27, 2006
Applicants:

Byoung Deog Choi, Gyeonggi-do, KR;

Ki Yong Lee, Yongin-si, KR;

Ho Kyoon Chung, Yongin-si, KR;

Jun Sin Yi, Seoul-si, KR;

Sung Wook Jung, Suwon-si, KR;

Hyun Min Kim, Gwangju-si, KR;

Jun Sik Kim, Seoul, KR;

Inventors:

Byoung Deog Choi, Gyeonggi-do, KR;

Ki Yong Lee, Yongin-si, KR;

Ho Kyoon Chung, Yongin-si, KR;

Jun Sin Yi, Seoul-si, KR;

Sung Wook Jung, Suwon-si, KR;

Hyun Min Kim, Gwangju-si, KR;

Jun Sik Kim, Seoul, KR;

Assignee:

Samsung Mobile Display Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.


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