The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Mar. 25, 2005
Simon Deleonibus, Claix, FR;
Simon Deleonibus, Claix, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
The field effect transistor comprises a source and a drain connected by a channel controlled by a gate electrode separated from the channel by a gate insulator. The channel is formed by a diamond-like carbon layer. The method for making the transistor successively comprises deposition of a diamond-like carbon layer on a substrate, deposition of a gate insulating layer and deposition of at least one conducting layer. The conducting layer is etched to form the gate electrode. Then an insulating material is deposited on the flanks of the gate electrode to form a lateral insulator. Then the gate insulating layer is etched and the diamond-like carbon layer is etched so as to delineate the channel. Then a semi-conducting material designed to form the source and a semi-conducting material designed to form the drain are deposited on each side of the channel.