The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Jun. 14, 2005
Daniel Francis, Oakland, CA (US);
Rashit Nabiev, East Palo Alto, CA (US);
Richard P. Ratowsky, Berkeley, CA (US);
David Bruce Young, Oakland, CA (US);
Sunil Thomas, Mountain View, CA (US);
Roman Dimitrov, San Jose, CA (US);
Daniel Francis, Oakland, CA (US);
Rashit Nabiev, East Palo Alto, CA (US);
Richard P. Ratowsky, Berkeley, CA (US);
David Bruce Young, Oakland, CA (US);
Sunil Thomas, Mountain View, CA (US);
Roman Dimitrov, San Jose, CA (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.