Semiconductor nonvolatile memory trimming technique for output characteristic control and redundancy repair

Abstract

In a semiconductor nonvolatile memory, plural first nonvolatile memory cells are arranged in the memory array. Plural memory areas are arranged in the memory array and have plural second nonvolatile memory cells which store the same predetermined information. A sequence circuit generates a memory address, a latch selection signal, and a control signal at predetermined timings when a power is turned on. A write-read unit writes and reads information to and from the memory array and the memory areas based on the memory address and the control signal. A latch circuit latches the predetermined information, read by the write-read unit, based on the latch selection signal. A selection-drive unit selects the first or second nonvolatile memory cells based on the memory address and the predetermined information latched by the latch circuit, and applies a predetermined voltage to drive the selected first or second nonvolatile memory cells.