The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2009

Filed:

Oct. 26, 2005
Applicants:

Paul W. Brazis, South Elgin, IL (US);

Daniel R. Gamota, Palatine, IL (US);

Kin P. Tsui, Morton Grove, IL (US);

John B. Szczech, Schaumburg, IL (US);

Jie Zhang, Buffalo Grove, IL (US);

Inventors:

Paul W. Brazis, South Elgin, IL (US);

Daniel R. Gamota, Palatine, IL (US);

Kin P. Tsui, Morton Grove, IL (US);

John B. Szczech, Schaumburg, IL (US);

Jie Zhang, Buffalo Grove, IL (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/094 (2006.01); H03K 19/0175 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An inverter circuit () having a drive transistor () that operably couples to a voltage bias input () (and where that drive transistor controls the inverter circuit output by opening and closing a connection between the output () and ground ()) is further operably coupled to a feedback switch (). In a preferred approach the feedback switch is itself also operably coupled to the voltage bias input and the output and preferably serves, when the drive transistor is switched 'off,' to responsively couple the voltage bias input to the drive transistor in such a way as to cause a gate terminal of the drive transistor to have its polarity relative to a source terminal of the drive transistor reversed and hence permit the inverter circuit to operate across a substantially full potential operating range of the drive transistor.


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