logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7550823 B1

PDFFull Text
Date of Patent:
Jun. 23, 2009

Filed:

Jul. 13, 2007

Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same

Applicants:

Byoung Deog Choi, Suwon-si, KR;

Jun Sin Yi, Suwon-si, KR;

Sung Wook Jung, Suwon-si, KR;

Sung Hyung Hwang, Suwon-si, KR;

Inventors:

Byoung Deog Choi, Suwon-si, KR;

Jun Sin Yi, Suwon-si, KR;

Sung Wook Jung, Suwon-si, KR;

Sung Hyung Hwang, Suwon-si, KR;

Assignee:

Samsung Mobile Display Co., Ltd., Suwon-si, KR;

Attorney:

Stein, McEwen & Bui, LLP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Find Patent Forward Citations

Loading…