The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Dec. 07, 2007
Daisuke Shibata, Osaka, JP;
Kazushi Nakazawa, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Yasuhiro Uemoto, Shiga, JP;
Tetsuzo Ueda, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Shibata, Osaka, JP;
Kazushi Nakazawa, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Yasuhiro Uemoto, Shiga, JP;
Tetsuzo Ueda, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of second electrodes formed spaced apart from each other on an active region in the nitride semiconductor layer. An interlayer insulating film is formed on the nitride semiconductor layer. The interlayer insulating film has openings that respectively expose the first electrodes and has a planarized top surface. A first electrode pad is formed in a region over the active region in the interlayer insulating film and is electrically connected to the exposed first electrodes through the respective openings.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile