The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Oct. 28, 2005
Mikiya Uchida, Kyoto, JP;
Ken Mimuro, Toyama, JP;
Mototaka Ochi, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A solid-state imaging device including: a plurality of photosensitive cells, each having a photodiode, arranged on a semiconductor substrate () in a matrix; and a peripheral driving circuit that has a plurality of transistors for driving the plurality of photosensitive cells. The plurality of transistors includes a first transistor and a second transistor, the first transistor having a first diffusion layer () as a source or a drain where a signal potential corresponding to a signal charge generated by the photodiode is transmitted and held, and the second transistor having a second diffusion layer as a source and a drain where the signal potential is not transmitted. An edge interval (D) between an edge of a metal silicide layer () formed on a surface of the first diffusion layer and an edge of a gate electrode () in the first transistor is larger than an edge interval between an edge of a metal silicide layer formed on a surface of the second diffusion layer and an edge of a gate electrode in the second transistor. It is possible to suppress a leakage current in the transistors in the peripheral driving circuit, and to hold picked-up image information with high accuracy.