Semiconductor device and fabrication method of a semiconductor device

Abstract

In a conventional semiconductor device provided with a conventional stacked type ferroelectric capacitor, there has been caused a problem of capacitor degradation by leakage between an upper electrode and a lower electrode via an etching reside, when the efficiency of utilization of a surface area is increased by decreasing the interval between the capacitors in the in-plane direction of the substrate, as a result of the one-step annealing of the laminated from of lower electrode film/ferroelectric film/upper electrode film. The present invention prevents leakage caused by short circuit between the lower electrode and the upper electrode, by forming plural lower electrodes, forming a ferroelectric film so as to cover the surface and sidewall surface of the lower electrodes and forming an upper electrode on the ferroelectric film so as to oppose with the lower electrodes. Further, as a result of forming the ferroelectric film so as to cover the lower electrodes continuously and by setting the interval between the lower electrodes and the thickness of the ferroelectric film to satisfy a predetermined relationship, the surface of the ferroelectric film is planarized and exposure of the sidewall is suppressed. Thereby, degradation of the capacitor is prevented.