The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Apr. 05, 2007
Hitoshi Nagata, Tokyo, JP;
Hitoshi Nagata, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A thin film transistor includes a metal substrate, a first conductive barrier layer placed on the metal substrate to prevent diffusion of substance of the metal substrate, a protective insulating film placed on the first conductive barrier layer, a semiconductor layer placed on the protective insulating film and including a source region, a drain region and a channel region, a gate insulating film placed on the semiconductor layer, and a gate electrode placed above the semiconductor layer with the gate insulating film interposed therebetween. The first conductive barrier layer and the semiconductor layer are electrically connected through a first opening of the protective insulating film.