The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Jul. 15, 2004
Toshiaki Sasaki, Otsu, JP;
Yohei Koi, Otsu, JP;
Kenji Yamamoto, Kobe, JP;
Masashi Yoshimi, Kobe, JP;
Mitsuru Ichikawa, Otsu, JP;
Toshiaki Sasaki, Otsu, JP;
Yohei Koi, Otsu, JP;
Kenji Yamamoto, Kobe, JP;
Masashi Yoshimi, Kobe, JP;
Mitsuru Ichikawa, Otsu, JP;
Kaneka Corporation, Osaka, JP;
Abstract
In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.