The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Oct. 31, 2005
Evelyn L. HU, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Elaine D. Haberer, Santa Barbara, CA (US);
Rajat Sharma, Goleta, CA (US);
Evelyn L. Hu, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Elaine D. Haberer, Santa Barbara, CA (US);
Rajat Sharma, Goleta, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.