Forming a semiconductor structure in manufacturing a semiconductor device using one or more epitaxial growth processes

Abstract

In one embodiment, a semiconductor structure used in manufacturing a semiconductor device includes a substrate layer. The structure also includes first and second isolation regions formed by etching an oxide layer provided on the substrate layer to define an epitaxial growth surface of the substrate layer for epitaxial growth of a substrate material on the epitaxial growth surface between the first and second isolation regions. The structure also includes an active region that includes the epitaxially-grown substrate material between the first and second isolation regions, the active region formed by epitaxially growing the substrate material on the epitaxial growth surface of the substrate layer.