The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2009

Filed:

Dec. 13, 2007
Applicants:

Hye-jin Kim, Yongin-si, KR;

Kwang-jin Lee, Hwaseong-si, KR;

Woo-yeong Cho, Suwon-si, KR;

Mu-hui Park, Seocho-gu, KR;

Inventors:

Hye-Jin Kim, Yongin-si, KR;

Kwang-Jin Lee, Hwaseong-si, KR;

Woo-Yeong Cho, Suwon-si, KR;

Mu-Hui Park, Seocho-gu, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

There are provided a bias voltage generator, a semiconductor memory device having the bias voltage generator, and a method for generating the bias voltage. The bias voltage generator which generates the bias voltage to control a sensing current supplied to a memory cell for sensing data is characterized in that the bias voltage is output in response to an input voltage being applied, so that a slope of the bias voltage to the input voltage is different in at least two sections divided corresponding to a level of the input voltage.


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