The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2009

Filed:

Apr. 15, 2004
Applicants:

Michinobu Tanioka, Tokyo, JP;

Atsuo Hattori, Shizuoka, JP;

Inventors:

Michinobu Tanioka, Tokyo, JP;

Atsuo Hattori, Shizuoka, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A conventional inspection probe has posed such problems that, when a pitch is as fine as up to 40 μm, a positional accuracy is difficult to ensure depending on constituting materials and a production method, pin breaking occurs when fine-diameter pins contact, a good contact cannot be obtained due to an insufficient contact, an durability is insufficient. An inspection probe having a probe structure comprising an elastic probe pin, a wiring layer carrying substrate, a backup plate to install a substrate thereon, an inspection substrate and a flexible substrate, characterized in that a good-contact material layer according to the electrode material of a semiconductor device is formed at the tip end of a probe pin and a wiring layer has a structure formed of a low-resistance metal layer, with the good-contact material layer being separated from the low-resistance metal layer. Such a structure can provide very high contact reliability and mechanical durability at a pitch as very fine as up to 40 μm.


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