The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Jan. 29, 2007
Anthony Yu-chung Ku, Rexford, NY (US);
Steven Alfred Tysoe, Ballston Spa, NY (US);
Vinayak Tilak, Schenectady, NY (US);
Peter Micah Sandvik, Clifton Park, NY (US);
Sergio Paulo Martins Loureiro, Saratoga Springs, NY (US);
James Anthony Ruud, Delmar, NY (US);
Anis Zribi, Rexford, NY (US);
Wei-cheng Tian, Clifton Park, NY (US);
Anthony Yu-Chung Ku, Rexford, NY (US);
Steven Alfred Tysoe, Ballston Spa, NY (US);
Vinayak Tilak, Schenectady, NY (US);
Peter Micah Sandvik, Clifton Park, NY (US);
Sergio Paulo Martins Loureiro, Saratoga Springs, NY (US);
James Anthony Ruud, Delmar, NY (US);
Anis Zribi, Rexford, NY (US);
Wei-Cheng Tian, Clifton Park, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
Gallium oxide films for sensing gas comprise GaOand have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.