The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Feb. 23, 2007
Sang-hun Jeon, Yongin-si, KR;
Chang-seok Kang, Seongnam-si, KR;
Jung-dal Choi, Suwon-si, KR;
Jin-taek Park, Suwon-si, KR;
Woong-hee Sohn, Seoul, KR;
Won-seok Jung, Yongin-si, KR;
Sang-Hun Jeon, Yongin-si, KR;
Chang-Seok Kang, Seongnam-si, KR;
Jung-Dal Choi, Suwon-si, KR;
Jin-Taek Park, Suwon-si, KR;
Woong-Hee Sohn, Seoul, KR;
Won-Seok Jung, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a semiconductor substrate including a cell region and a peripheral circuit region, a cell gate on the cell region, and a peripheral circuit gate on the peripheral circuit region, wherein the cell gate includes a charge storage insulating layer on the semiconductor substrate, a gate electrode on the charge storage insulating layer, and a conductive layer on the gate electrode, and the peripheral circuit gate includes a gate insulating layer on the semiconductor substrate, a semiconductor layer on the gate insulating layer, an ohmic layer on the semiconductor layer, and the conductive layer on the ohmic layer.