The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Aug. 26, 2005
Applicant:
Masataka Higashiwaki, Tokyo, JP;
Inventor:
Masataka Higashiwaki, Tokyo, JP;
Assignee:
National Institute of Information and Communications Technology, Incorporated Administrative Agency, Koganei-Shi, Tokyo, unknown;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A GaN-based heterostructure field effect transistor capable of accomplishing higher output, higher breakdown voltage, higher speed, higher frequency, and the like. A heterostructure field effect transistor including a channel layer () of GaN and a barrier layer () of AlGaN, wherein the surface of a transistor element has an insulating film ().
Higashiwaki, Masataka. (2009). Gan-based field effect transistor and production method therefor (U.S. Patent No. 7547911). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7547911
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile