The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Sep. 27, 2007
Katsushi Akita, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Takashi Kyono, Itami, JP;
Hiroyuki Kitabayashi, Osaka, JP;
Koji Katayama, Osaka, JP;
Katsushi Akita, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Takashi Kyono, Itami, JP;
Hiroyuki Kitabayashi, Osaka, JP;
Koji Katayama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (), a gallium nitride cladding layer () has a threading dislocation density of 1×10cmor less. An active region () has a quantum well structure () consisted of a plurality of well layers () and a plurality of barrier layers (), and the quantum well structure () is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers () each include an un-doped InGaN (0<X<0.14, X: strained composition) region. The barrier layers () include an un-doped InGaN (0≦Y≦0.05, Y: strained composition, Y<X) region. Herein, indium composition X is indicated as strained composition, not as relaxation composition, in the embodiments of the present invention.