The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Mar. 05, 2005
Joongseo Park, Kyunggi-do, KR;
Joongseo Park, Kyunggi-do, KR;
Epivalley Co., Ltd., Koomi, KR;
Abstract
The present invention relates to a IΠ-nitride compound semiconductor light emitting device comprising an active layer with the multi-quantum wells interposed between an n-InAlGaN(x+y+z=1, 0<x<1, 0<y<1, 0<z≦1) layer and a p-InAlGaN(x+y+z=1, 0<x<1, 0<y<1, 0<z<1) layer, wherein the active layer comprises an alternate stacking of a quantum-well layer made of InGaN(0.05<x<1) and a sandwich barrier layer, the sandwich barrier layer comprising a first outer barrier layer of InGaN(0<a<0.05), a middle barrier layer of AlGaN(0<y<1) formed on the first outer barrier layer and a second outer barrier layer of InGaN(0<b<0.05) formed on the middle barrier layer, thereby a high-efficiency/high-output light emitting device with high-current and high-temperature properties can be obtained, and it is possible to easily achieve a high-efficiency green light emission at a wavelength equal to or over 500 nm, and high-efficiency near UV light emission.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile