The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Jul. 07, 2006
Michael Mueller, Alameda, CA (US);
Jim Cheng, Berkeley, CA (US);
Albert Pisano, Danville, CA (US);
Thomas H. Cauley, Iii, Berkeley, CA (US);
Michael Mueller, Alameda, CA (US);
Jim Cheng, Berkeley, CA (US);
Albert Pisano, Danville, CA (US);
Thomas H. Cauley, III, Berkeley, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An organic material can be used in a modified strain gauge for IR transduction, resulting in an organic IR sensor. Infrared radiation incident on the organic material modulates a displacement of the material in order to detect the presence and intensity of IR radiation. This innovative design doesn't require cooling, and is sensitive to 9 and 3 μm—wavelengths that are emitted by mammals and forest fires, respectively. In addition, a photomechanical polymer can be used in a transistor based on a thin-film transistor (TFT), also resulting in an IR sensor. Through careful synthesis of the polymers, the photomechanical response of the transistor can be tailored to certain IR bands for detection purposes.