The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Aug. 20, 2004
Frank J. Ruess, Randwick, AU;
Lars Oberbeck, Coogee, AU;
Michelle Yvonne Simmons, Coogee, AU;
K. E. Johnson Goh, Singapore, SG;
Alexander Rudolf Hamilton, Forestville, AU;
Mladen Mitic, Ryde, AU;
Rolf Brenner, Chatswood, AU;
Neil Jonathan Curson, Randwick, AU;
Toby Hallam, Newtown, AU;
Frank J. Ruess, Randwick, AU;
Lars Oberbeck, Coogee, AU;
Michelle Yvonne Simmons, Coogee, AU;
K. E. Johnson Goh, Singapore, SG;
Alexander Rudolf Hamilton, Forestville, AU;
Mladen Mitic, Ryde, AU;
Rolf Brenner, Chatswood, AU;
Neil Jonathan Curson, Randwick, AU;
Toby Hallam, Newtown, AU;
Qucor Pty Ltd, , AU;
Abstract
This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition the STM tip to pattern the device structure. Forming the active region of the device and then encapsulating it such that one or more of the registration markers are still visible to allow correct positioning of surface electrodes. The method can be used to form any number of device structures including quantum wires, single electron transistors, arrays or gate regions. The method can also be used to produce 3D devices by patterning subsequent layers with the STM and encapsulating in between.