The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2009

Filed:

Mar. 21, 2008
Applicants:

Hitoshi Nakamura, Tokyo, JP;

Hajime Abe, Tokyo, JP;

Noriaki Ishio, Tokyo, JP;

Inventors:

Hitoshi Nakamura, Tokyo, JP;

Hajime Abe, Tokyo, JP;

Noriaki Ishio, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from a location opposite the light-emitting units, and offset from a desired cleavage line intersecting the light-emitting units. A scratch is formed on the desired cleavage line. The wafer is cleaved, originating on the scratch, along the cleavage line orientation, in the direction from the dummy pattern, toward the light-emitting units.


Find Patent Forward Citations

Nakamura, Hitoshi. (2009). Method for manufacturing semiconductor light emitting device (U.S. Patent No. 7547587). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7547587

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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