The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
May. 20, 2005
Wen-jian Lin, Hsinchu, TW;
Wen-Jian Lin, Hsinchu, TW;
Qualcomm MEMS Technologies, Inc., San Diego, CA (US);
Abstract
The method of manufacturing an optical interference color display is described. A first electrode structure is formed over a substrate first. At least one first area, second area and third area are defined on the first electrode structure. A first sacrificial layer is formed over the first electrode structure of the first area, the second area and the third area. Moreover, a second sacrificial layer is formed over the first sacrificial layer inside the second area and the third area. In addition, a third sacrificial layer is formed over the second sacrificial layer inside the third area. The etching rates of all sacrificial layers are different. Then, a patterned support layer is formed over the first electrode structure. Next, a second electrode layer is formed and the sacrificial layers are removed to form air gaps. Therefore, the air gaps are effectively controlled by using the material having different etching rates.