The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2009

Filed:

Dec. 20, 2007
Applicants:

John J. Drab, Santa Barbara, CA (US);

Thomas K. Dougherty, Playa del Rey, CA (US);

Kathleen A. Kehle, Santa Barbara, CA (US);

Inventors:

John J. Drab, Santa Barbara, CA (US);

Thomas K. Dougherty, Playa del Rey, CA (US);

Kathleen A. Kehle, Santa Barbara, CA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising TaO.


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