The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Oct. 30, 2006
Satoru Araki, San Jose, CA (US);
John Contreras, Palo Alto, CA (US);
Klaas Berend Klaassen, San Jose, CA (US);
Ramona Marie Patterson, San Jose, CA (US);
David John Seagle, Morgan Hill, CA (US);
Howard Gordon Zolla, San Jose, CA (US);
Satoru Araki, San Jose, CA (US);
John Contreras, Palo Alto, CA (US);
Klaas Berend Klaassen, San Jose, CA (US);
Ramona Marie Patterson, San Jose, CA (US);
David John Seagle, Morgan Hill, CA (US);
Howard Gordon Zolla, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) read head structure has the MR read head located between first and second shields (S, S) on a substrate with a shunt resistor Rconnecting Sto the substrate and a shunt resistor Rconnecting Sto the substrate, with Rand Rbeing approximately equal. Because Rand Rare close enough in value there is no significant interference pickup in the low frequency region. The shunt resistors can be formed from high-resistivity metal nitrides or cermets. The spacing between the substrate and Smay be selected to make the capacitance between Sand the substrate approximately equal to the capacitance between Sand the substrate to substantially reduce interference pickup in the high frequency region. Equalization conductors (EC, EC) may be connected to the substrate and spaced from Sand S, respectively, by electrically insulating material to create additional capacitances with values selected to substantially equalize the total parasitic capacitance on Swith the total parasitic capacitance on S