The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Mar. 20, 2007
Sean W. Kao, South Pasadena, CA (US);
Tim Tuan, San Jose, CA (US);
Arifur Rahman, San Jose, CA (US);
Sean W. Kao, South Pasadena, CA (US);
Tim Tuan, San Jose, CA (US);
Arifur Rahman, San Jose, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
Leakage current reduction from a logic block is implemented via power gating transistors that exhibit increased gate oxide thickness as compared to the thin-oxide devices of the power gated logic block. Increased gate oxide further allows increased gate to source voltage differences to exist on the power gating devices, which enhances performance and reduces gate leakage even further. Placement of the power gating transistors in proximity to other increased gate oxide devices minimizes area penalties caused by physical design constraints of the semiconductor die.