The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Aug. 02, 2007
Louis Hsu, Fishkill, NY (US);
Jong-ru Guo, Wappingers Falls, NY (US);
Ping-chuan Wang, Hopewell Junction, NY (US);
Zhijian Yang, Stormville, NY (US);
Louis Hsu, Fishkill, NY (US);
Jong-Ru Guo, Wappingers Falls, NY (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
Zhijian Yang, Stormville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.