The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Feb. 22, 2005
Yutaka Hayashi, Tsukuba-shi, Ibaraki 305-0045, JP;
Hisashi Hasegawa, Chiba, JP;
Yoshifumi Yoshida, Chiba, JP;
Jun Osanai, Chiba, JP;
Yutaka Hayashi, Tsukuba-shi, Ibaraki 305-0045, JP;
Hisashi Hasegawa, Chiba, JP;
Yoshifumi Yoshida, Chiba, JP;
Jun Osanai, Chiba, JP;
Seiko Instruments Inc., , JP;
Other;
Abstract
A high voltage operating field effect transistor has a substrate, a source region and a drain region which are spaced apart from each other in a surface of the substrate, a semiconductor channel formation region disposed in the surface of the substrate between the source region and the drain region, a gate region disposed above the channel formation region, and a gate insulating film region disposed between the channel formation region and the gate region. At least one of a signal electric potential and a signal current is supplied to the source region, and a bias electric potential having an absolute value equal to or larger than a first constant electric potential which changes according to an increase or decrease in a drain electric potential is supplied to the gate region. One end of a rectifying device is connected to the gate region, and a second constant electric potential is supplied to the other end of the rectifying device.