The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Jan. 26, 2007
Jin-woo Kim, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Don-woo Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A non-volatile memory device and methods of manufacturing and operating the same are provided. In a method of manufacturing a non-volatile memory device, a substrate having a stepped portion that may include a first horizontal face, a second horizontal face lower than the first horizontal face, and a vertical face connected between the first and second horizontal faces may be prepared. A first impurity region may be formed under the first horizontal face. A tunnel insulation layer may be continuously formed on the vertical face and the second horizontal face. A floating gate electrode having a tip higher than the first horizontal face may be formed on the tunnel insulation layer. A dielectric layer may be formed on the floating gate electrode. The floating gate electrode may be covered with a control gate electrode. A second impurity region horizontally spaced apart from the floating gate electrode may be formed under the second horizontal face.