The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Aug. 24, 2005
Shahin Toutounchi, Pleasanton, CA (US);
James Karp, Saratoga, CA (US);
Jongheon Jeong, Palo Alto, CA (US);
Michael G. Ahrens, Sunnyvale, CA (US);
Michael J. Hart, Palo Alto, CA (US);
Shahin Toutounchi, Pleasanton, CA (US);
James Karp, Saratoga, CA (US);
Jongheon Jeong, Palo Alto, CA (US);
Michael G. Ahrens, Sunnyvale, CA (US);
Michael J. Hart, Palo Alto, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
An MOS transistor is programmed in a non-volatile memory cell. A storage capacitor in the non-volatile memory cell is used to enhance programming efficiency by providing additional charge to the programming terminal of the MOS transistor during breakdown of the gate dielectric, thus avoiding soft programming faults. In a particular embodiment the storage capacitor is a second MOS transistor having a thicker gate dielectric layer than the dielectric layer of the programmable MOS transistor.