The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7544617 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 09, 2009

Filed:

Jun. 23, 2006
Applicants:

Abhijit Chandra, Ames, IA (US);

Muthukkumar Kadavasal, Ames, IA (US);

Sutee Eamkajornsiri, Ames, IA (US);

Inventors:

Abhijit Chandra, Ames, IA (US);

Muthukkumar Kadavasal, Ames, IA (US);

Sutee Eamkajornsiri, Ames, IA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for control of chemical mechanical polishing of a pattern dependant non-uniform wafer surfaces in a die scale wherein the die in the wafer surface have a plurality of zones of different heights and different pattern densities is provided. The method provides for varying pressure applied to the die both spatially and temporally to reduce both local and global step height variations. In one embodiment, pressure is varied both spatially and temporally using a look ahead algorithm. The algorithm looks ahead and recalculates/modifies the pressure values by identifying the step heights that could be formed after a specified time step. The final surface predictions have improved uniformity on the upper surface as well as on the step heights across the entire die.


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