The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Nov. 06, 2007
Applicant:
Takeo Shirahama, Tokyo, JP;
Inventor:
Takeo Shirahama, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
Abstract
An aluminum gallium nitride/gallium nitride layer (III-V nitride semiconductor layer) is formed on the surface of a silicone carbide substrate. The aluminum gallium nitride/gallium nitride layer is dry-etched from an exposed surface, using a chlorine-based gas (first gas) and a surface via hole is thereby formed. A back via hole, which is to be connected to the surface via hole, is formed by dry-etching the silicon carbide substrate from an exposed back side using a fluorine-based gas (second gas).
Shirahama, Takeo. (2009). Method of manufacturing iii-v nitride semiconductor device (U.S. Patent No. 7544611). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7544611
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile