The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Nov. 12, 2004
Ken Mui, Portland, OR (US);
Aaron Marmorstein, Atlanta, GA (US);
Eric Lee, Corvallis, OR (US);
Integrated Device Technology, Inc., San Jose, CA (US);
Abstract
A process for forming CMOS devices is disclosed in which disposable spacers are used to obtain a structure having improved gap-fill characteristics. First, gate film stacks are formed on the substrate. A shallow implant process is performed so as to form shallow source/drain implant regions. A layer of oxide and a layer of silicon nitride are deposited and etched to form a first set of spacers that extend on opposite sides of the gate film stacks. A second implant is performed so as to form intermediate source/drain implant regions. A set of disposable spacers are then formed that extend on opposite sides of each of the gate film stacks. A third implant process is performed so as to form deep source/drain implant regions. The disposable spacers are then removed, providing more space for the subsequently-formed contact to land.