The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Feb. 20, 2007
Applicant:
Osamu Koike, Miyagi, JP;
Inventor:
Osamu Koike, Miyagi, JP;
Assignee:
Oki Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A dummy oxide film having a film thickness that is the same as that of a gate oxide film of a high voltage transistor is formed on a gate electrode of a transistor, and the dummy oxide film and the gate oxide film formed on a substrate surface are removed at the same time during etching for spacer formation. Thus, it becomes possible to stably form a spacer width that sufficiently satisfies device characteristics when manufacturing a semiconductor device where a low voltage transistor and a high voltage transistor are formed on the same semiconductor substrate.