The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2009

Filed:

Sep. 27, 2006
Applicants:

Kenichi Kawabata, Tokyo, JP;

Takaaki Morita, Tokyo, JP;

Inventors:

Kenichi Kawabata, Tokyo, JP;

Takaaki Morita, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor IC-embedded substrate suitable for embedding a semiconductor IC in which the electrode pitch is extremely narrow. The substrate comprises a semiconductor ICin which stud bumpsare provided to the principal surfacea first resin layerfor covering the principal surfaceof the semiconductor ICand a second resin layerfor covering the back surfaceof the semiconductor ICThe stud bumpsof the semiconductor ICprotrude from the surface of the first resin layerThe method for causing the stud bumpsto protrude from the surface of the first resin layermay involve using a wet blasting method to cause an overall reduction of the thickness of the first resin layerThe stud bumpscan thereby be properly uncovered even when the electrode pitch of the semiconductor ICis narrow.


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