The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2009

Filed:

Dec. 10, 2001
Applicants:

Takahiro Taneda, Osaka, JP;

Koso Fujino, Osaka, JP;

Kazuya Ohmatsu, Osaka, JP;

Inventors:

Takahiro Taneda, Osaka, JP;

Koso Fujino, Osaka, JP;

Kazuya Ohmatsu, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is described. In a deposition method, a film is formed by scattering a deposition material from a target () surface and growing the scattered deposition material on a main surface () of a substrate (). The method includes the steps of positioning the substrate () into a first state where the distance between one end () and the target () is small and the distance between the other end () and the target material () is relatively large, forming a first film () on the substrate () in the first state, positioning the substrate () into a second state where the distance between one end () and the target () is large and the distance between the other end () and the target () is small, and. forming a second film () on the first film () in the second state.


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