The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Sep. 29, 2006
Simon Dodd, Philomath, OR (US);
S. Jonathan Wang, Albany, OR (US);
Dennis W. Tom, Corvallis, OR (US);
Frank R. Bryant, Denton, TX (US);
Terry E. Mcmahon, Albany, OR (US);
Richard Todd Miller, Corvallis, OR (US);
Gregory T. Hindman, Albany, OR (US);
Simon Dodd, Philomath, OR (US);
S. Jonathan Wang, Albany, OR (US);
Dennis W. Tom, Corvallis, OR (US);
Frank R. Bryant, Denton, TX (US);
Terry E. McMahon, Albany, OR (US);
Richard Todd Miller, Corvallis, OR (US);
Gregory T. Hindman, Albany, OR (US);
Hewlett-Packard Development Comapny, L.P., Houston, TX (US);
Abstract
A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening in the first conductive material that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material, forming a second insulative material over the first conductive material, and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contacts the non-doped region of the substrate.