The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Aug. 17, 2007
Toru Takayama, Nara, JP;
Tomoya Satoh, Osaka, JP;
Koichi Hayakawa, Okayama, JP;
Isao Kidoguchi, Hyogo, JP;
Toru Takayama, Nara, JP;
Tomoya Satoh, Osaka, JP;
Koichi Hayakawa, Okayama, JP;
Isao Kidoguchi, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of W≧W; W>W; and (W−W)/2L<(W−W)/2Lhold wherein Wis a width on the first front end face; Wis a width in a position away from the first front end face by a distance L; and Wis a width in a position away from said the front end face by a distance L+L(whereas L+L≦L). The stripe structure of the second first light emitting portion has a section having a width changing along a resonator direction and includes a second front end face, and relationships of W≧W; W>W; and (W−W)/2L<(W−W)/2Lhold wherein Wis a width on the second front end face; Wis a width in a position away from the second front end face by a distance L(whereas L≠L); and Wis a width in a position away from the second front end face by a distance L+L.