The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Jul. 19, 2007
Mahbub M. Rashed, Austin, TX (US);
Robert E. Booth, Austin, TX (US);
Sushama Davar, Austin, TX (US);
Giri Nallapati, Austin, TX (US);
Mahbub M. Rashed, Austin, TX (US);
Robert E. Booth, Austin, TX (US);
Sushama Davar, Austin, TX (US);
Giri Nallapati, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method determines a body bias for a memory cell. A supply voltage is applied to the memory cell and a bit line is precharged to a voltage lower than the supply voltage. A programmable bias voltage circuit provides a bias voltage to the memory cell in response to values on its input. Initial test values for the input are used. The memory cell is tested to determine a pass or a fail condition of the memory cell. The initial values are retained as the input values if the memory cell passes. If the memory cell fails, the memory cell is tested at changed values for the input. If the changed input values result in the memory cell being in a pass condition, the programmable bias voltage circuit is configured, in non-volatile fashion, to have the changed input values.