The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Aug. 13, 2007
Satoshi Yoshimura, Kameyama, JP;
Shinichi Sato, Fukuyama, JP;
Satoru Yamagata, Fukuyama, JP;
Shinji Horii, Tenri, JP;
Satoshi Yoshimura, Kameyama, JP;
Shinichi Sato, Fukuyama, JP;
Satoru Yamagata, Fukuyama, JP;
Shinji Horii, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor memory device comprises an array of memory cells each comprising a variable resistance element and a cell access transistor, and a voltage supplying means for applying the first voltage between the bit and source lines connected to the selected memory cell, the third voltage to the word line to apply the first write voltage between the two ports of the variable resistance element for shifting the resistance from the first state to the second state, and the second voltage opposite in polarity to the first voltage between the bit and source lines, the third voltage to the word line to apply the second write voltage opposite in polarity to and different in the absolute value from the first write voltage between the two ports for shifting the resistance from the second state to the first state, the voltage supplying means comprising an n-channel MOSFET and a p-channel MOSFET.