The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Dec. 01, 2006
Fumitaka Arai, Yokohama, JP;
Makoto Sakuma, Kuwana, JP;
Fumitaka Arai, Yokohama, JP;
Makoto Sakuma, Kuwana, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a memory cell array are arranged a plurality of cell units having memory cells and selection gate transistors to select the memory cell. A first selection gate line includes a control gate of the selection gate transistors. A second selection gate line is formed above the first selection gate line. The first selection gate line has a first gate electrode, a first inter-gate insulating film and a second gate electrode superimposed in this order. The first inter-gate insulating film has a first opening portion through which the first gate electrode and the second gate electrode come into contact with each other. A contact material is formed on the first selection gate line, and electrically connects the first selection gate line and the second selection gate line with each other. The contact material is arranged on the first selection gate line on which the first opening portion is not arranged.