The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Oct. 07, 2005
Applicants:
Keiko Kawamura, Yokohama, JP;
Masanobu Tsuchitani, Kawasaki, JP;
Inventors:
Keiko Kawamura, Yokohama, JP;
Masanobu Tsuchitani, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprises a semiconductor substrate having a gate trench formed therein. A gate electrode is formed on a gate insulator in the gate trench. The gate electrode has ends close to the bottom of the gate trench, which are separated in a direction perpendicular to both sides of the gate trench, and portions except the separated ends, at least part of which is made higher in conductivity than other parts.