The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Jul. 21, 2003
Young-kai Chen, Berkeley Heights, NJ (US);
Rose Fasano Kopf, Green Brook, NJ (US);
Wei-jer Sung, Hsinchu, TW;
Nils Guenter Weimann, Chatham, NJ (US);
Young-Kai Chen, Berkeley Heights, NJ (US);
Rose Fasano Kopf, Green Brook, NJ (US);
Wei-Jer Sung, Hsinchu, TW;
Nils Guenter Weimann, Chatham, NJ (US);
Alcatel-Lucent USA Inc., Murray Hill, NJ (US);
Abstract
A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.