The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Aug. 22, 2005
Takahisa Kurahashi, Kashiba, JP;
Tetsurou Murakami, Tenri, JP;
Shouichi Ooyama, Kyoto-fu, JP;
Osamu Yamamoto, Nara, JP;
Takahisa Kurahashi, Kashiba, JP;
Tetsurou Murakami, Tenri, JP;
Shouichi Ooyama, Kyoto-fu, JP;
Osamu Yamamoto, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer. The transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface. Light beams totally reflected on the parallel surface and light beams totally reflected on a side surface of the transparent substrate come incident to the inclined surface at an angle smaller than the critical angle, and emit out of the semiconductor light emitting device.