The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2009

Filed:

Jan. 24, 2006
Applicants:

Thomas G. O'neill, Mountain View, CA (US);

Robert J. Bosnyak, Tacoma, WA (US);

Inventors:

Thomas G. O'Neill, Mountain View, CA (US);

Robert J. Bosnyak, Tacoma, WA (US);

Assignee:

Sun Microsystems, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device is described, including a first diffusion region having a first terminal, a second diffusion region having a second terminal, and a channel region disposed between the first diffusion region and the second diffusion region. Further, the first terminal and the second terminal are offset to enable a non-Manhattan current flow. A system is also described, including the previously described device and a second transistor. The pathway for the flow of the majority of the current carriers in the device defines a first direction. The second transistor also has at least two terminals, and a pathway for a majority of current carriers between the two terminals defines a second direction. The angle between the first direction and the second direction is nonzero and acute.


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