The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Nov. 14, 2005
Toshiki Hara, Suwa, JP;
Toshiki Hara, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor is manufactured by forming a γ-aluminum oxide layer on a semiconductor substrate, forming a semiconductor layer on the γ-aluminum oxide layer, forming an exposed portion for exposing a part of the γ-aluminum oxide layer through the semiconductor layer, forming a support which is formed of a material having an etching rate smaller than that of the γ-aluminum oxide layer and which supports the semiconductor layer on the semiconductor substrate, forming a cavity between the semiconductor substrate and the semiconductor layer, forming a buried insulating layer in the cavity, forming a gate electrode on the semiconductor layer with a gate insulating layer therebetween and forming source/drain layers, which are disposed on both sides of the gate electrode, in the semiconductor layer.